WebbWe present a quantitative theory to describe enhancement of defect reaction rates upon electron-hole recombination. The theory is based on the following mechanism: energy liberated upon nonradiative electron or hole capture is converted largely into vibrational energy that is initially localized in the vicinity of the defect. This vibrational energy can be … Webb24 aug. 2024 · Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which provide information on excitation energies and on the interaction of electrons with lattice …
Dopants and Defects in Semiconductors - 2nd Edition - Matthew …
WebbThe details of bound exciton systems vary as much as the many free exciton systems discussed by Knox ().To provide a basis for discussing data, we treat the system which proves particularly amenable to analysis (Hopfield 1964).Here the host crystal is a nonpolar isotropic semiconductor for which the simplest effective-mass theory is appropriate. Webb26 feb. 2011 · We discuss the application of state-of-the-art first-principles calculations to the problem of defects, impurities, and doping levels in semiconductors. Since doping problems are of particular relevance in wide-band-gap materials, we focus here on studies of ZnSe and GaN. depth upper cabinets
Defects in Semiconductors - AIP Publishing LLC
WebbTheory of Quantum Transport in Metallic and Hybrid Nanostructures, St. Petersburg, August 2003, edited by V. Kozub and V. Vinokur. (Kluwer Academic Publishers, Dordecht, The Webb1 jan. 2007 · Request PDF On Jan 1, 2007, J.P. Goss and others published Theory of Defects in Semiconductors Find, read and cite all the research you need on ResearchGate Webb14 nov. 2013 · Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. fiat millbury